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| RSS085N05 Transistor 4V Drive Nch MOS FET RSS085N05 Structure Silicon N-channel MOS FET External dimensions (Unit : mm) INe eo oi oe/ o e/ ioee Features 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). i* (R) oi/ o i/ ioie oi Applications Power switching , DC / DC converter, Inverter U1/2 1/4 - - 1/4*-*- Packaging dimensions 1/2 I IIIeeOe Y1/4 -*1/2 (R)1/4(R)* * o*1/2-/ I* I ie Absolute maximum ratings (Ta=25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP *1 IS ISP *1 PD *2 Tch Tstg Limits 45 20 8.5 34 1.6 34 2 150 -55 to +150 Unit V V A A A A W o o Equivalent circuit oe/ oe/ oe/ oe/ oe/ oe/ oe/ oe/ i i oi/ oi/ oi/ oi/ Total power dissipation Chanel temperature Range of Storage temperature *1 PW 10 Duty cycle 1 *2 Mounted on a ceramic board oi/ oi/ oi/ oi/ C C i UIU (R)1/2* U*1/4o i 1/4 U*1/4o oi/ oi/ oi/ oi/ oe/ oe/ oe/ oe/ I(R)1/2 I(R)1/2 I(R)1/2 U U(R)* U(R)* U(R)* U(R)* (R)1/2* 1/4*1/4 *- *1/21/41/4 3/4(c) 1/4 -(R)1/2 (R)*- (R)1/2 1/4*1/4 *- -*1/2 1/2(R)*1/2* (c) (R)1/41/2 *- * -oE- (R)1/2* 1/2*(R)1/2* (c) *1/4 (R) 1/21/41/4o Thermal resistance Parameter Chanel to ambient * Mounted on a ceramic board Symbol Rth(ch-a) * Limits 62.5 Unit o C/W 1/4 RSS085N05 Transistor Electrical characteristics (Ta=25 C) (R)(R) I3/4 Uo-(R)1/2 xUII U(R)*o-(R)1/2 3/4(R)1/4(c) EoI/ UII AE(R) 1/4(R)* 1/2(R)(R) xUII U (R)-1/4 EUI o/ I*1/2 1/4(R)*o-(R)1/2 o- (R)-*-1/2 U(R)(c)(R)1/4 (R)-(R) 1/4*1/2 x 1/21/2*1/2 N 1/21/2*1/2 I(R)- (R)-(R) 1/21/2*1/2 I(R)o 1/4 * I*- * I(R)o 1/4 * U * I 1/2(R) Uo-(R)1/2 1/2(R) Uo1/4(R)* 1/2(R) -1/4 IUI o/ CY*-Y-Y(R)-1/4 o/ (R) 1/4 o/ I II1/4 O*o - ie - io - - - eo - - - - - - - - - - Io - - - - ii ie ie - ie ie ie ic ie ei ii ieoi ioi eo Oo i - i ioe ie ii ie - - - - - - - - iioi - - E* k E k E I U U U Y Y Y Y1/4**EUIaiEo EUIaE xUa io EUIaE EUIa ieEo EUIaE EUIa iEo xUa i xUa eoeo EUIa iE xUa eoeo EUIa ioeE xUa eoeo EUIa iE EUIa iEo xUa eoe EUIa iE EUIaE aiOO| EUU ieE xUa io EUIa iE IOaeoi IUai EUU ieE EUIa eE xUa eoe IUai IOaioc Body diode characteristics (Source-Drain) (Ta=25 C) (R)(R) U(R)(c)(R)1/4 -1/4 I3/4 EIU O*o - Io - Oo ioi E* E Y1/4**xIa eoeo EUIaE 2/4 RSS085N05 Transistor Electrical characteristic curves 10 VDS=10V pulsed Ta=125 C 75oC 25oC -25oC o 1000 VGS=10V pulsed Ta=125oC 75oC 25oC -25oC 1000 VGS=4.5V pulsed Ta=125oC 75oC 25oC -25oC 1 100 100 0.1 10 10 0.01 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1 0.01 1 0.1 1 10 0.01 0.1 1 10 Drain Current : ID [A] Gate-Source Voltage : VGS [V] Drain Current : ID [A] Fig.1 Typical Transfer Characteristics Fig.2 Static Drain-Source On-State Resistance vs. Drain Current (1) Fig.3 Static Drain-Source On-State Resistance vs. Drain Current (2) 1000 VGS=4V pulsed Ta=125oC 75oC 25oC -25oC 200 Ta=25oC pulsed 10 Ta=125oC 75oC 25oC -25oC V GS =0V pulsed 150 100 1 100 ID=8.5A 0.1 10 50 ID=4.75A 0.01 1 0.01 0 0.1 1 10 0 3 6 9 12 15 Drain Current : ID [A] 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Gate-Source Voltage : VGS [V] Source-Drain Voltage : VSD [V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current (3) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 10000 Fig.6 Source-Current vs. Source-Drain Voltage 10000 Ta=25 C f=1MHz VGS=0V o 10 Ta=25oC VDD=25V VGS=10V tf RG=10 Pulsed Ta=25 C VDD=25V ID=8.5A RG =10 Pulsed o Ciss 1000 1000 Coss 100 td(off) td(on) 5 100 Crss 10 tr 10 0.01 0.1 1 10 100 Drain-Source Voltage : VDS [V] 1 0.01 0.1 1 Drain Current : ID [A] 10 0 0 5 10 15 20 25 30 Total Gate Charge : Qg [nC] Fig.7 Typical capacitance vs. Source-Drain Voltage Fig.8 Switching Characteristics Fig.9 Dynamic Input Characteristics 3/4 RSS085N05 Transistor Measurement circuits - E*1/4 EUI xU IO UoEoIo EUI EUI EUI eu iu iu cu eu iu IU EUU 1/4o/ cu (R) 1/4o/ cu (R) U*oi I(c)*1/2* I* I- Y*(R)1/2* U*oii I(c)*1/2* I* E(R)- EU EUI xU IO xU oY-o/ IU UoEoIo EUU EUI EUI II1/4 I Y(R) U*oii U Y(R) I- Y*(R)1/2* U*oii U Y(R) E(R) 4/4 Appendix OO 1/2*1/2 1/2 - *- 1/41/2 3/4 (R)(R)1/41/21/4 * (R) (R) (R)-*1/4 3/4 - (c)* (R)*(R) (R)*--* INOO YNooOIUo I 1/2- 1/4-1/2(R)*3/41/4 (R)* (R) -3/41/2 1/2 (c)* *1/2o I -1/2**1/2*- (R) (R)1/41/2 1/4-1/2(R)*3/41/4 * *- 1/41/2 (R) (R) (R)(R)1/2 o E 1/2 -o (R)(R)o - (R)- -1/2**1/2*- 3/4 -(R) 1/4*(R)1/4o *1/2* 1/2*(R)1/2* 1/4*(R)- 1/4 1/2*(R)1/2* 1/2-- 1/2*1/4 (R)* (R) -(c) - - -1/4(R)1/4 - 1/4 (R)*o - 1/2(R) * (R)*(R) 1/21/4**- (c) 1/4-** 1/2*(R)1/2*1/4 1/41/2*1/4* 1/2*(R)1/2* 1/2-- * -o 1/4o *1/21/4*o 3/4 **1/4 *1/2* 1/2*(R)1/2* 1/4*(R)- *(R)*o 1/4-1/2(R)*3/41/4 (R)* (R) *1/41/4 - *-(R)*- -1/2 1/4*1/2- 1/4 - -1/2**1/2*- (R) -1/2 1/4*1/2-o INOO YNooOIUo 1/4*-1/2*- (c)(R)(R) - -1/2 1/4*1/2- - 3/4 (R) (R) *(R)* *(R)1/4 (R)u- *1/2 (R)(R) (R)*- (R) (R) (R)(R)*(R) (R)*-o 1/4 (R)(R)o --- *3/4** (c)-(R) (R) * -1/2 *(R)*o (R) (R)*-* (R) (R) 1/21/21/4 (c)* (R) (R)1/4 - -1/2 1/4*1/2-o E - -1/2 1/4*1/2-o (R) (R) 3/4(R)u- (R)* - -1/2 1/4*1/2- *-o (R)- (R) (R)(c)*- 1/4*-- -o (R)-- (R) **1/4 (R)* (R) *1/2- (R)1/2*1/2 (R) 1/2(R)1/2* * *1/2 (R)(R) (R)*- (R) (R) (R)(R)*(R) (R)*- (c)1/4 (R) 1/2(R)1/4 3/4 INOO YNoo OIUo *- (R)1/4 -1/2 3/4(R)o (R)1/41/2- *-1/4 * *- 1/41/2 (R) *(R)1/4** 1/4-*o I (R)1/41/2- *-1/4 * *- 1/41/2 (R) 1/4-*1/4 3/4 -1/4 (c)* (R)1/4*(R) 1/2(R)*1/2 * (R) 1/4*1/2o-1/2 - 1/4* *- *o *1/2o* *o 1/2*1/2*- 1/4*1/2-o 1/2(R)*1/2 *1/2- 1/4 1/2(R)*1/2 -/o I1/4 *1/4 - - (R)1/41/2- (c)* * (R) 1/4*1/2- (c)*1/2 (R)*(R) (R) * (R)*3/4** 1/4 1/2* (c)* (c)1/4 1/4*(R)1/2 1/4(R) * o-1/2 - 1/4*1/2 *-(R)-o (R)-(R)* *o (R)-1/2 1/2*(R)o 1/2(R)o(R)1/2(R) 1/2(R)(R)-o 1/2(R)(R)- 1/4 (R) - 1/4*1/2-/o - 3/4 -(R) 1/2- (c)* (R) -- (R)(R)-* * 1/41/2o 3/4 U(R) Y(R) N(R)1/4(R) * O (R)1/41/2- 1/4-1/2(R)*3/41/4 (R)* (R) 3/41/2- 1/2(R)1/4 1/4- * i ox ie/ U(R) I(R)1/4 Y(R) N(R)1/4(R) * Oo x 1/2- (R) (R) Oo - 1/2*(R) * * *- 3/41/2* 1/2(R)*(R)* (R) *(R)1/4 o3/4 OxIx 1/2-/ 3/4-*- 1/21/2 1/2(R)- (R) Oo(R)*(R)* E- O-- U-(R)1/2*o Appendix1-Rev1.1 |
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